Thursday 13^th September

ORALS

Time	Topic	Presenting author	Title
09.00-09.40		N Iizuka, Toshiba Corporation, Japan (INVITED)	Intersubband Transition in GaN/AlN Multiple Quantum Wells for Optical Switches.
09.40-10.00	Alternative	F H Julien, Université Paris-Sud, Paris	Room-temperature Intersubband Emission from GaN/AlN Quantum Wells at λ ≈2 μm.
10.00-10.20	materials I	M Halsall, University of Manchester	Growth by MOVPE of AlGaN/GaN structures with intersubband transitions in the 1.2-1.7 μm region of the spectrum.
10.20-10.40	Chair: M. Giehler	M Tchernycheva, Université Paris-Sud, Paris	Intersubband spectroscopy of electron tunnelling in GaN/AlN coupled quantum wells.
10.40-11.00			Coffee
11.00-11.40		A A Anappara, Scuola Normale Superiore, Pisa (INVITED)	Harnessing light-matter interaction in intersubband microcavities.
11.40-12.00	Cavities and	D Austin, University of Sheffield	Quantum cascade lasers with facet-patterned nano-antennas for near field vibrational spectroscopy.
12.00-12.20	Applications II	J Heinrich, Universität Wűrzburg	Quantum Cascade Microlasers with Two-Dimensional Photonics Crystal Reflectors.
12.20-12.40		V Moreau, Université Paris-Sud, Paris	Direct imaging of a laser mode via mid-infrared near-field microscopy.
12.40-13.00	Chair: M. Wanke	P Dean, University of Leeds	Diffuse Terahertz Reflection Imaging Using Quantum Cascade Lasers.
1-2 pm			Lunch
16.00-16.20		K. Akita, Institute of Advanced Industrial Science and Tech, Japan	Ultrafast Intersubband All-Optical Switch in Wide-gap II-VI Quantum Well toward Lower Switching Energy Operation.
16.20-16.40	Alternative	G Sun, University of Massachusetts	Strain Free Ge/GeSiSn Quantum Cascade Laser Based on L-valley Intersubband Transitions.
16.40-17.00	materials II	M Virgilio, University of Pisa	Selection rules for intersubband transitions in valley split [001]-Ge quantum wells.
17.00-17.20	Chair: C. Gmachl	L Lever, University of Leeds	The effects of inter-diffusion in Si-SiGe quantum cascade devices.
17.20-17.40		Tea and refreshments
*POSTERS*
		P Aivaliotis, University of Sheffield	Increasing the dot density in quantum dot infrared photodetectors via antimony-mediated dot formation.
	Posters II	S Menzel, University of Sheffield	Electron Capture and Relaxation in N-Type InAs/GaAs Quantum Dots.
		K Král, Institute of Physics of the ASCR, Cz.	Quantum effects in optical spectra line shapes and electronic relaxation in quantum dots.
	and	W Sheng, Fudan University, Shanghai	Origins of linear polarization of intersubband transitions in InAs/GaAs self-assembled quantum dots: a new picture.
17.40-19.00	Refreshments	A Vardi, Technion Institute of Technology, Israel	TE Polarized MIR Intraband Photodetection in Self Assembed GaN/AlN Quantum Dots.
		M Austerer, University of Technology, Vienna	Nonlinear light generation in GaAs quantum-cascade lasers.
		M Scheinert, Paul Scherrer Institut, Switzerland	Raman Lasing and Femto-Second Intersubband Relaxation of coupled GaInAs/InAlAs QWs.
		J Bai, Institute of Technology, Georgia, U.S.A.	Performance Analysis of Mid-Infrared Quantum Cascade Lasers with Enhanced Optical Nonlinearity.
		A Lisauskas, Goethe University, Frankfurt, Germany	Internal Mixing in Active Semiconductor Devices for Room-Temperature Generation of Tuneable Continuous-Wave Terahertz Radiation.
		I Karabulut, University of Selcuk	The Second-Order Nonlinear Optical Susceptibilities of an Asymmetric Rectangular Quantum Well.
		L Nevou, Université, Paris-Sud, France	Second-harmonic generation of λ~1 μm enhanced by intersubband transitions of GaN/AlN quantum wells.
		B Passmore, Univerersity of Arkansas	Near-Infrared wavelength intersubband transitions in hexagonal and cubic GaN/AlN short period superlattices.
		A Ishida, Shizuoka University, Japan	Normal Incident Intersubband Absorptions in EuTe/PbTe Superlattices.
		A Valavanis, University of Leeds	n-type Si/siGe quantum cascade structures.
		A Valavanis, University of Leeds	Intervalley mixing and intersubband transitions in n-type Si/SiGe quantum wells.
		A Nafidi, Institute of Physics, New York	Band structures and new magneto-transport properties in HgTe/CdTe superlattices.
		E Benveniste, University Paris Diderot	Experimental and theoretical study of intersubband electroluminescent diodes based on different material systems.
	Posters II	A Hugi, University of Neuchâtel	Room temperature continuous wave operation of an external cavity quantum cascade laser.
		M Zaluzny, M Curie-Sklodowska University	Microcavity effect on the nonlinear intersubband absorption in multiple-quantum-well structures: the strong coupling regime.
		M Bahriz, Université, Paris-Sud	Design of mid-Ir and THz quantum cascade laser cavities with complete TM photonic bandgap.
	and	M Maineult, Université Denis Diderot, Paris	Far Field Beam Patterns of Terahertz Quantum Cascade Lasers.
		J Semmel, Wűrzburg University	Edge Emitting InP based Quantum Cascade Microlasers with Deeply Etched Bragg Mirrors.
		L Mahler, Scuola Normale Superiore, Pisa	Terahertz quantum cascade lasers with quasi-periodic resonators.
17.40-19.00		G Fasching, Vienna University	Whispering-Gallery Quantum-Cascade Lasers in the Terahertz Frequency Regime.
		J Plumridge, Imperial College, London	Quantum Metamaterials for Plasmonics and Strong Coupling.
	Refreshments	J N Hovenier, Delft University	Beam patterns of distributed feedback surface-plasmon THz quantum cascade lasers.
		M Carras, QCL Laboratory	Broadband loss measurements in passive and active mid-infrared waveguides using Fabry-Pérot resonances.
		P Aivaliotis, University of Sheffield	Experimental and theoretical investigation of the spectral Stark shift in quantum dots-in-a-well infrared photodetectors.
		A Gomez, University of Paris	Magneto-transport measurements in Quantum Cascade Detectors.
		S K Haywood, University of Hull	A Strain-compensated Mid-infrared Quantum Well Photodetector Operating at Zero Bias up to 250 K and in Photoconductive Mode up to 300K.
		M R Matthews, Imperial College, London	Transient photoconductivity measurements of carrier lifetimes in a InAs/In_0.15Ga_0.85As Dots-in-a-well detector.
		A Nedelcu, Thales Research and Technology	Quantum Well Infrared Photodetectors for two-colour MWIR imagery.
		E O Karabulut, University of Selcuk	Intensity-Dependent Refractive Index of an Asymmetric Rectangular Quantum Well
		V Berger, University of Paris	QCDs versus QWIPs
		H Schneider, Forschungszentrum, Dresden	Intersubband relaxation dynamics in InGa/AlAsSb multiple quantum wells.
		G Bahir, Technion Institute-Israel	Negative Intraband NIR Photoconductivity in GaN/A1N Quantum Dots
		G. Bahir,Technion Institute-Israel	Unpolarized Itersubband Photocurrent in Te Doped GaInAsN/GaAlAs quantum well Infrared Photodector
		A. Udal, University of Technology, Tallin, Estonia	Efficiency Estimation for a Broadband 7 THz Radiation Source with GaAs/AlGaAs Parabolic Quantum Wells.
		K.Nontapot, Virginia Tech.	Carrier Dynamics in InSb Based Quantum Well Structures.
Latest news		L.Sirigu	Terahertz Quantum Cascade Laser grown by low-pressure metalorganic vapour phase epitaxy.
Latest news		W. Freeman	Proposed use of Step Quantum Wells for Terahertz Quantum cascade Lasers.
Latest news		B.N. Behnken	Use of 2.7-Thz quantum Cascade Laser and Microbolometer Camera for Imaging of Concealed Objects
7 pm		Gala Dinner