ITQW07 The Ninth International Conference on Intersubband Transitions in Quantum Wells
Sunday 9th-Friday 14th September 2007
Ambleside, Cumbria, U.K.

ITQW 07 Programme

Day 1 Day 2 Day 3 Day 4 Day 5
Click on the titles to download the PDF abstracts.

Thursday 13th September




Presenting author




N Iizuka, Toshiba Corporation, Japan (INVITED)

Intersubband Transition in GaN/AlN Multiple Quantum Wells for Optical Switches.




F H Julien, Université Paris-Sud, Paris

Room-temperature Intersubband Emission from GaN/AlN Quantum Wells at λ ≈2 μm.


materials I

M Halsall, University of Manchester

Growth by MOVPE of AlGaN/GaN structures with intersubband transitions in the 1.2-1.7 μm region of the spectrum.


M. Giehler

M Tchernycheva, Université Paris-Sud, Paris


Intersubband spectroscopy of electron tunnelling in GaN/AlN coupled quantum wells.











A A Anappara, Scuola Normale Superiore, Pisa (INVITED)

Harnessing light-matter interaction in intersubband microcavities.





Cavities and



D Austin, University of Sheffield


Quantum cascade lasers with facet-patterned nano-antennas for near field vibrational spectroscopy.


Applications II

J Heinrich, Universität Wűrzburg

Quantum Cascade Microlasers with Two-Dimensional Photonics Crystal Reflectors.




V Moreau, Université Paris-Sud, Paris

Direct imaging of a laser mode via mid-infrared near-field microscopy.


M. Wanke

P Dean, University of Leeds

Diffuse Terahertz Reflection Imaging Using Quantum Cascade Lasers.

1-2 pm






K. Akita, Institute of Advanced Industrial Science and Tech, Japan

Ultrafast Intersubband All-Optical Switch in Wide-gap II-VI Quantum Well toward Lower Switching Energy Operation.



G Sun, University of Massachusetts

Strain Free Ge/GeSiSn Quantum Cascade Laser Based on L-valley Intersubband Transitions.


materials II

M Virgilio, University of Pisa

Selection rules for intersubband transitions in valley split [001]-Ge quantum wells.


Chair: C. Gmachl

L Lever, University of Leeds

The effects of inter-diffusion in Si-SiGe quantum cascade devices.





Tea and refreshments









P Aivaliotis, University of Sheffield

Increasing the dot density in quantum dot infrared photodetectors via antimony-mediated dot formation.


Posters II

S Menzel, University of Sheffield

Electron Capture and Relaxation in N-Type InAs/GaAs Quantum Dots.




K Král, Institute of Physics of the ASCR, Cz.


Quantum effects in optical spectra line shapes and electronic relaxation in quantum dots.



W Sheng, Fudan University, Shanghai

Origins of linear polarization of intersubband transitions in InAs/GaAs self-assembled quantum dots: a new picture.



A Vardi, Technion Institute of Technology, Israel

TE Polarized MIR Intraband Photodetection in Self Assembed GaN/AlN Quantum Dots.



M Austerer, University of Technology, Vienna

Nonlinear light generation in GaAs quantum-cascade lasers.



M Scheinert, Paul Scherrer Institut, Switzerland

Raman Lasing and Femto-Second Intersubband Relaxation of coupled GaInAs/InAlAs QWs.



J Bai, Institute of Technology, Georgia, U.S.A.

Performance Analysis of Mid-Infrared Quantum Cascade Lasers with Enhanced Optical Nonlinearity.



A Lisauskas, Goethe University, Frankfurt, Germany

Internal Mixing in Active Semiconductor Devices for Room-Temperature Generation of Tuneable Continuous-Wave Terahertz Radiation.



I Karabulut, University of Selcuk

The Second-Order Nonlinear Optical Susceptibilities of an Asymmetric Rectangular Quantum Well.




L Nevou, Université, Paris-Sud, France


Second-harmonic generation of λ~1 μm enhanced by intersubband transitions of GaN/AlN quantum wells.



B Passmore, Univerersity of Arkansas

Near-Infrared wavelength intersubband transitions in hexagonal and cubic GaN/AlN short period superlattices.



A Ishida, Shizuoka University, Japan

Normal Incident Intersubband Absorptions in EuTe/PbTe Superlattices.



A Valavanis, University of Leeds

n-type Si/siGe quantum cascade structures.



A Valavanis, University of Leeds

Intervalley mixing and intersubband transitions in n-type Si/SiGe quantum wells.



A Nafidi, Institute of Physics, New York

Band structures and new magneto-transport properties in HgTe/CdTe superlattices.



E Benveniste, University Paris Diderot

Experimental and theoretical study of intersubband electroluminescent diodes based on different material systems.


Posters II

A Hugi, University of Neuchâtel

Room temperature continuous wave operation of an external cavity quantum cascade laser.



M Zaluzny, M Curie-Sklodowska University

Microcavity effect on the nonlinear intersubband absorption in multiple-quantum-well structures: the strong coupling regime.



M Bahriz, Université, Paris-Sud

Design of mid-Ir and THz quantum cascade laser cavities with complete TM photonic bandgap.





M Maineult, Université Denis Diderot, Paris


Far Field Beam Patterns of Terahertz Quantum Cascade Lasers.



J Semmel, Wűrzburg University

Edge Emitting InP based Quantum Cascade Microlasers with Deeply Etched Bragg Mirrors.



L Mahler, Scuola Normale Superiore, Pisa

Terahertz quantum cascade lasers with quasi-periodic resonators.



G Fasching, Vienna University

Whispering-Gallery Quantum-Cascade Lasers in the Terahertz Frequency Regime.



J Plumridge, Imperial College, London

Quantum Metamaterials for Plasmonics and Strong Coupling.



J  N Hovenier, Delft University

Beam patterns of distributed feedback surface-plasmon THz quantum cascade lasers.



M Carras, QCL Laboratory

Broadband loss measurements in passive and active mid-infrared waveguides using Fabry-Pérot resonances.



P Aivaliotis, University of Sheffield

Experimental and theoretical investigation of the spectral Stark shift in quantum dots-in-a-well infrared photodetectors.



A Gomez, University of Paris

Magneto-transport measurements in Quantum Cascade Detectors.



S K Haywood, University of Hull

A Strain-compensated Mid-infrared Quantum Well Photodetector Operating at Zero Bias up to 250 K and in Photoconductive Mode up to 300K.



M R Matthews, Imperial College, London

Transient photoconductivity measurements of carrier lifetimes in a InAs/In0.15Ga0.85As Dots-in-a-well detector.



A Nedelcu, Thales Research and Technology

Quantum Well Infrared Photodetectors for two-colour MWIR imagery.



E O Karabulut, University of Selcuk

Intensity-Dependent Refractive Index of an Asymmetric Rectangular Quantum Well



V Berger, University of Paris

QCDs versus QWIPs




H Schneider, Forschungszentrum, Dresden

Intersubband relaxation dynamics in InGa/AlAsSb multiple quantum wells.



G Bahir, Technion Institute-Israel

Negative Intraband NIR Photoconductivity in GaN/A1N Quantum Dots




G. Bahir,Technion Institute-Israel

Unpolarized Itersubband Photocurrent in Te Doped GaInAsN/GaAlAs quantum well Infrared Photodector




A. Udal, University of Technology, Tallin, Estonia

Efficiency Estimation for a Broadband 7 THz Radiation Source with GaAs/AlGaAs Parabolic Quantum Wells.



K.Nontapot, Virginia Tech.

Carrier Dynamics in InSb Based Quantum Well Structures.

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Terahertz Quantum Cascade Laser grown by low-pressure metalorganic vapour phase epitaxy.

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W. Freeman

Proposed use of Step Quantum Wells for Terahertz Quantum cascade Lasers.

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B.N. Behnken

Use of 2.7-Thz quantum Cascade Laser and Microbolometer Camera for Imaging of Concealed Objects


  7 pm



Gala Dinner